PUBLICATIONS

This dissertation proposes a temperature reduction technique for power semiconductors based on Discontinuous Pulse Width Modulation (DPWM) in a two-level inverter. The proposed method adjusts the discontinuous region of DPWM to reduce the junction temperature of SiC modules and compares its performance using Sinusoidal Pulse Width Modulation (SPWM) and Space Vector Pulse Width Modulation (SVPWM). In various industrial applications, ensuring the reliability and lifespan of inverter systems is crucial, which requires effective thermal management and precise control of the power semiconductor temperature. Conventional temperature control methods typically involve the use of active gate drivers or external controllers, which increase system complexity and cost while limiting power density.

In this dissertation, the switching and conduction losses of the power semiconductor under different DPWM modulations are quantitatively analyzed, and the junction temperature is estimated based on these losses. Subsequently, a temperature control model is proposed by utilizing the discontinuous region of DPWM to achieve the target temperature. In particular, the influence of power loss variations caused by the selection of the discontinuous region on the junction temperature is examined, and the potential of this approach as a thermal reduction strategy is presented. The effectiveness of the proposed technique is validated through simulations and experimental results.