This paper reviewed the state-of-the-art wide bandgap (WBG) technology from material level to system level. The properties of semiconductor
materials, i.e., silicon carbide and gallium nitride, were investigated. The electrical characteristics of commercial power devices, which include static and dynamic performances, were assessed, and compared. The design requirements of WBG gate drivers were then underpinned, and various gate driver
topologies were reviewed. Lastly, their implementation in power electronic converters and performances were evaluated.